Department of Engineering

Dr Giorgia Longobardi - Publications

Number of items: 18.

Article

Efthymiou, L and Murukesan, K and Longobardi, G and Udrea, F and Shibib, A and Terrill, K (2019) Understanding the Threshold Voltage Instability during OFF-State Stress in p-GaN HEMTs. IEEE Electron Device Letters, 40. pp. 1253-1256. ISSN 0741-3106

Efthymiou, L and Longobardi, G and Camuso, G and Udrea, F (2019) Bonding Pad over Active Area Layout for Lateral AlGaN/GaN Power HEMTs: A Critical View. IEEE Transactions on Electron Devices, 66. pp. 2301-2306. ISSN 0018-9383

Donato, N and Pagnano, D and Napoli, E and Longobardi, G and Udrea, F (2017) Design of a normally-off diamond JFET for high power integrated applications. Diamond and Related Materials, 78. pp. 73-82. ISSN 0925-9635

Longobardi, G and Udrea, F (2017) On the time-dependent transport mechanism between surface traps and the 2DEG in AlGaN/GaN devices. IEEE Transactions on Electron Devices, 64. pp. 4415-4423. ISSN 0018-9383

Longobardi, G and Yang, S and Pagnano, D and Camuso, G and Udrea, F (2017) On the vertical leakage of GaN-on-Si lateral transistors and the effect of emission and trap-to-trap-tunneling through the AlN/Si barrier. Proceedings of the 29th International Symposium on Power Semiconductor Devices & ICs (ISPSD). pp. 227-230. (Unpublished)

Sun, J and Longobardi, G and Udrea, F and Zhu, C and Camuso, G and Yang, S and Garg, R and Imam, M and Charles, A (2017) Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure. Applied Physics Letters, 110. ISSN 0003-6951

Efthymiou, L and Longobardi, G and Camuso, G and Chien, T and Chen, M and Udrea, F (2017) On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices. Applied Physics Letters, 110. ISSN 0003-6951

Efthymiou, L and Camuso, G and Longobardi, G and Chien, T and Chen, M and Udrea, F (2017) On the source of oscillatory behaviour during switching of power enhancement mode GaN HEMTs. Energies, 10. ISSN 1996-1073

Longobardi, G and Udrea, F and Sque, S and Croon, J and Hurkx, F and Šonskỳ, J (2015) Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal-insulator-semiconductor field-effect transistors and high-electron-mobility transistors. IET Power Electronics, 8. pp. 2322-2328. ISSN 1755-4535

Longobardi, G and Udrea, F and Sque, S and Hurkx, GAM and Croon, J and Napoli, E and Sonský, J (2014) Impact of donor traps on the 2DEG and electrical behavior of AlGaN/GaN MISFETs. IEEE Electron Device Letters, 35. pp. 27-29. ISSN 0741-3106

Longobardi, G and Udrea, F (2013) On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 155-158.

Longobardi, G and Udrea, F and Sque, S and Croon, J and Hurkx, F and Napoli, E and Šonský, J (2012) Modelling 2DEG charges in AlGaN/GaN heterostructures. Proceedings of the International Semiconductor Conference, CAS, 2. pp. 363-366.

Conference or Workshop Item

Efthymiou, L and Longobardi, GCG and Udrea, F and Lin, E and Chien, T and Chen, M (2016) Zero reverse recovery in SiC and GaN Schottky diodes: A comparison. In: International Symposium on Power Semiconducotr Devices (ISPSD), 2016-6-12 to 2016-6-16, Prague, Czech Republic pp. 71-74..

Yang, S and Liu, S and Liu, C and Hua, M and Longobardi, G and Udrea, F and Chen, KJ and IEEE, (2016) Performance Enhancement and Characterization Techniques for GaN Power Devices. In: UNSPECIFIED.

Longobardi, G and Udrea, F and Sque, S and Croon, J and Hurkx, F and Šonský, J (2015) The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling. In: UNSPECIFIED 17.1.1-17.1.4..

Efthymiou, L and Longobardi, G and Camuso, G and Hsieh, APS and Udrea, F (2015) Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters. In: UNSPECIFIED pp. 211-214..

De Luca, A and Longobardi, G and Udrea, F (2015) SOI multidirectional thermoelectric flow sensor for harsh environment applications. In: UNSPECIFIED pp. 95-98..

Longobardi, G and Udrea, F and Sque, S and Croon, J and Hurkx, F and Šonský, J (2014) The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET Experiment and TCAD simulations. In: UNSPECIFIED pp. 329-332..

This list was generated on Sun Nov 17 00:08:08 2019 GMT.