Department of Engineering

Dr Zhaofu Zhang - Publications

Number of items: 84.

Article

Zhao, J and Byggmästar, J and Zhang, Z and Djurabekova, F and Nordlund, K and Hua, M (2021) Phase transition of two-dimensional ferroelectric and paraelectric Ga2 O3 monolayers: A density functional theory and machine learning study. Physical Review B, 104. ISSN 2469-9950

Chen, J and Zhang, Z and Guo, Y and Robertson, J (2021) Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces. Journal of Applied Physics, 129. ISSN 0021-8979

Wang, Z and Zhang, Z and Liu, S and Robertson, J and Guo, Y (2021) Electronic properties and tunability of the hexagonal SiGe alloys. Applied Physics Letters, 118. ISSN 0003-6951

Niu, H and Wan, X and Wang, X and Shao, C and Robertson, J and Zhang, Z and Guo, Y (2021) Single-Atom Rhodium on Defective g-C3N4: A Promising Bifunctional Oxygen Electrocatalyst. ACS Sustainable Chemistry and Engineering, 9. pp. 3590-3599.

Liu, X and Zhang, Z and Ding, Z and Lv, B and Luo, Z and Wang, JS and Gao, Z (2021) Highly anisotropic electronic and mechanical properties of monolayer and bilayer As<inf>2</inf>S<inf>3</inf>. Applied Surface Science, 542. ISSN 0169-4332

Niu, H and Zhang, Z and Wang, X and Wan, X and Shao, C and Guo, Y (2021) Theoretical Insights into the Mechanism of Selective Nitrate-to-Ammonia Electroreduction on Single-Atom Catalysts. Advanced Functional Materials, 31. ISSN 1616-301X

Yin, Y and Zhang, Z and Zhong, H and Shao, C and Wan, X and Zhang, C and Robertson, J and Guo, Y (2021) Tellurium nanowire gate-all-around MOSFETs for Sub-5 nm applications. ACS Applied Materials and Interfaces, 13. pp. 3387-3396. ISSN 1944-8244

Zhang, Z and Wang, Z and Guo, Y and Robertson, J (2021) Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs. Applied Physics Letters, 118. ISSN 0003-6951

Xu, S and Yin, Y and Niu, H and Wang, X and Shao, C and Xi, K and Zhang, Z and Guo, Y (2021) Adsorption and diffusion of alkali atoms on FeX<inf>2</inf> (X = Se, S) surfaces for potassium-ion battery applications. Applied Surface Science, 536. ISSN 0169-4332

Wang, Z and Zhang, Z and Shao, C and Robertson, J and Liu, S and Guo, Y (2021) Defects and Passivation Mechanism of the Suboxide Layers at SiO/4H-SiC (0001) Interface: A First-Principles Calculation. IEEE Transactions on Electron Devices, 68. pp. 288-293. ISSN 0018-9383

Niu, H and Zhang, Z and Wang, X and Wan, X and Kuai, C and Guo, Y (2021) A Feasible Strategy for Identifying Single-Atom Catalysts Toward Electrochemical NO-to-NH<inf>3</inf> Conversion. Small. e2102396-. ISSN 1613-6810

Zhao, J and Huang, X and Yin, Y and Liao, Y and Mo, H and Qian, Q and Guo, Y and Chen, X and Zhang, Z and Hua, M (2021) Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application. Journal of Physical Chemistry Letters, 12. pp. 5813-5820.

Niu, H and Wang, X and Shao, C and Zhang, Z and Guo, Y (2020) Computational Screening Single-Atom Catalysts Supported on g-CN for N<inf>2</inf>Reduction: High Activity and Selectivity. ACS Sustainable Chemistry and Engineering, 8. pp. 13749-13758.

Zhang, Z and Guo, Y and Robertson, J (2020) Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers. Journal of Physical Chemistry C, 124. pp. 19698-19703. ISSN 1932-7447

Lv, B and Hu, X and Liu, X and Zhang, Z and Song, J and Luo, Z and Gao, Z (2020) Thermal transport properties of novel two-dimensional CSe. Physical Chemistry Chemical Physics, 22. pp. 17833-17841. ISSN 1463-9076

Zhou, Q and Zhang, Z and Li, H and Golovynskyi, S and Tang, X and Wu, H and Wang, J and Li, B (2020) Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center. APL Materials, 8.

Liao, Y and Zhang, Z and Gao, Z and Qian, Q and Hua, M (2020) Tunable Properties of Novel Ga<inf>2</inf>O<inf>3</inf>Monolayer for Electronic and Optoelectronic Applications. ACS Applied Materials and Interfaces, 12. pp. 30659-30669. ISSN 1944-8244

Zhang, Z and Guo, Y and Robertson, J (2020) Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces. Applied Physics Letters, 116. p. 251602. ISSN 0003-6951

Yin, Y and Shao, C and Zhang, C and Zhang, Z and Zhang, X and Robertson, J and Guo, Y (2020) Anisotropic Transport Property of Antimonene MOSFETs. ACS Applied Materials and Interfaces, 12. pp. 22378-22386. ISSN 1944-8244

Zhang, Z and Guo, Y and Robertson, J (2020) Electronic structure of amorphous copper iodide: A p -type transparent semiconductor. Physical Review Materials, 4.

Liu, X and Gao, Z and Wang, V and Luo, Z and Lv, B and Ding, Z and Zhang, Z (2020) Extrapolated Defect Transition Level in Two-Dimensional Materials: The Case of Charged Native Point Defects in Monolayer Hexagonal Boron Nitride. ACS Applied Materials and Interfaces, 12. pp. 17055-17061. ISSN 1944-8244

Zhang, Z and Guo, Y and Robertson, J (2020) Phase dependence of Schottky barrier heights for Ge-Sb-Te and related phase-change materials. Journal of Applied Physics, 127. ISSN 0021-8979

Niu, H and Wang, X and Shao, C and Liu, Y and Zhang, Z and Guo, Y (2020) Revealing the oxygen reduction reaction activity origin of single atoms supported on g-C<inf>3</inf>N<inf>4</inf> monolayers: A first-principles study. Journal of Materials Chemistry A, 8. pp. 6555-6563. ISSN 2050-7488

Zhang, Z and Huang, B and Qian, Q and Gao, Z and Tang, X and Li, B (2020) Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation. APL Materials, 8.

Zhang, Z and Guo, Y and Lu, H and Clark, SJ and Robertson, J (2020) Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors. Applied Physics Letters, 116. ISSN 0003-6951

Guo, H and Zhang, Z and Guo, Y and Gao, Z and Zheng, R and Wu, H (2020) Impact of the interface vacancy on Schottky barrier height for Au/AlN polar interfaces. Applied Surface Science, 505. ISSN 0169-4332

Zhang, Z and Guo, Y and Robertson, J (2020) Role of the third metal oxide in In-Ga-Zn-O<inf>4</inf>amorphous oxide semiconductors: Alternatives to gallium. Journal of Applied Physics, 128. ISSN 0021-8979

Wan, X and Niu, H and Yin, Y and Wang, X and Shao, C and Zhang, Z and Guo, Y (2020) Enhanced electrochemical oxygen evolution reaction activity on natural single-atom catalysts transition metal phthalocyanines: The substrate effect. Catalysis Science and Technology, 10. pp. 8339-8346. ISSN 2044-4753

Wang, X and Niu, H and Liu, Y and Shao, C and Robertson, J and Zhang, Z and Guo, Y (2020) Theoretical investigation on graphene-supported single-atom catalysts for electrochemical CO<inf>2</inf>reduction. Catalysis Science and Technology, 10. pp. 8465-8472. ISSN 2044-4753

Wang, Z and Zhang, Z and shao, C and Robertson, J and Liu, S and Guo, Y (2020) Tuning the high-κ oxide (HfO<inf>2</inf>, ZrO<inf>2</inf>)/4H-SiC interface properties with a SiO<inf>2</inf> interlayer for power device applications. Applied Surface Science, 527. ISSN 0169-4332

Guo, H and Zhang, Z and Huang, B and Wang, X and Niu, H and Guo, Y and Li, B and Zheng, R and Wu, H (2020) Theoretical study on the photocatalytic properties of 2D InX(X = S, Se)/transition metal disulfide (MoS<inf>2</inf>and WS<inf>2</inf>) van der Waals heterostructures. Nanoscale, 12. pp. 20025-20032. ISSN 2040-3364

Yang, S and Tang, Z and Hua, M and Zhang, Z and Wei, J and Lu, Y and Chen, KJ (2020) Investigation of SiN<inf>x</inf> and AlN passivation for AlGaN/GaN high-electron-mobility transistors: Role of interface traps and polarization charges. IEEE Journal of the Electron Devices Society, 8. pp. 358-364.

Zhang, Z and Guo, Y and Robertson, J (2019) Atomic structure and band alignment at Al<inf>2</inf>O<inf>3</inf>/GaN, Sc<inf>2</inf>O<inf>3</inf>/GaN and La<inf>2</inf>O<inf>3</inf>/GaN interfaces: A first-principles study. Microelectronic Engineering, 216. ISSN 0167-9317

Zhang, Z and Chen, J and Guo, Y and Robertson, J (2019) Band alignment calculation of dielectric films on VO<inf>2</inf>. Microelectronic Engineering, 216. ISSN 0167-9317

Chen, J and Zhang, Z and Guo, Y and Robertson, J (2019) Schottky barrier height at metal/ZnO interface: A first-principles study. Microelectronic Engineering, 216. ISSN 0167-9317

Li, B and Tang, X and Li, H and Moghadam, HA and Zhang, Z and Han, J and Nguyen, NT and Dimitrijev, S and Wang, J (2019) Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs. Applied Physics Express, 12. ISSN 1882-0778

Hua, M and Cai, X and Yang, S and Zhang, Z and Zheng, Z and Wang, N and Chen, KJ (2019) Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride. ACS Applied Electronic Materials, 1. pp. 642-648.

Lei, J and Wei, J and Tang, G and Qian, Q and Zhang, Z and Hua, M and Zheng, Z and Chen, KJ (2019) Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor with Interdigital Built-in Schottky Barrier Diode. IEEE Transactions on Electron Devices, 66. pp. 2106-2112. ISSN 0018-9383

Zhang, Z and Guo, Y and Robertson, J (2019) Chemical bonding and band alignment at X<inf>2</inf>O<inf>3</inf>/GaN (X = Al, Sc) interfaces. Applied Physics Letters, 114. p. 161601. ISSN 0003-6951

Cai, X and Hua, M and Zhang, Z and Yang, S and Zheng, Z and Cai, Y and Chen, KJ and Wang, N (2019) Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel. Applied Physics Letters, 114. ISSN 0003-6951

Qian, Q and Lei, J and Wei, J and Zhang, Z and Tang, G and Zhong, K and Zheng, Z and Chen, KJ (2019) 2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current. npj 2D Materials and Applications, 3.

Liu, X and Zhang, Z and Luo, Z and Lv, B and Ding, Z (2019) Tunable electronic properties of graphene/g-ALN heterostructure: The effect of vacancy and strain engineering. Nanomaterials, 9.

Gao, Z and Zhang, Z and Liu, G and Wang, JS (2019) Ultra-low lattice thermal conductivity of monolayer penta-silicene and penta-germanene. Physical Chemistry Chemical Physics, 21. pp. 26033-26040. ISSN 1463-9076

Hua, M and Wei, J and Bao, Q and Zheng, Z and Zhang, Z and He, J and Chen, KJ (2018) Hole-Induced Threshold Voltage Shift under Reverse-Bias Stress in E-Mode GaN MIS-FET. IEEE Transactions on Electron Devices, 65. pp. 3831-3838. ISSN 0018-9383

He, J and Hua, M and Zhang, Z and Chen, KJ (2018) Performance and V<inf>TH</inf> Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs with LPCVD-SiN<inf>x</inf>/PECVD-SiN<inf>x</inf> Gate Dielectric Stack. IEEE Transactions on Electron Devices, 65. pp. 3185-3191. ISSN 0018-9383

Tang, X and Zhang, Z and Wei, J and Li, B and Wang, J and Chen, KJ (2018) Photon emission and current-collapse suppression of AlGaN/GaN field-effect transistors with photonic–ohmic drain at high temperatures. Applied Physics Express, 11. ISSN 1882-0778

Lei, J and Wei, J and Tang, G and Zhang, Z and Qian, Q and Zheng, Z and Hua, M and Chen, KJ (2018) Reverse-blocking normally-OFF GaN double-channel MOS-HEMT with low reverse leakage current and low ON-state resistance. IEEE Electron Device Letters, 39. pp. 1003-1006. ISSN 0741-3106

Hua, M and Qian, Q and Wei, J and Zhang, Z and Tang, G and Chen, KJ (2018) Bias Temperature Instability of Normally-Off GaN MIS-FET with Low-Pressure Chemical Vapor Deposition SiN<inf>x</inf> Gate Dielectric. Physica Status Solidi (A) Applications and Materials Science, 215. ISSN 1862-6300

Zhang, Z and Qian, Q and Li, B and Chen, KJ (2018) Interface Engineering of Monolayer MoS<inf>2</inf>/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment. ACS Applied Materials and Interfaces, 10. pp. 17419-17426. ISSN 1944-8244

Qian, Q and Zhang, Z and Chen, KJ (2018) Layer-dependent second-order Raman intensity of Mo S2 and WS e2: Influence of intervalley scattering. Physical Review B, 97. ISSN 2469-9950

Hua, M and Wei, J and Bao, Q and Zhang, Z and Zheng, Z and Chen, KJ (2018) Dependence of V<inf>TH</inf> Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET. IEEE Electron Device Letters, 39. pp. 413-416. ISSN 0741-3106

Qian, Q and Zhang, Z and Chen, KJ (2018) In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS<inf>2</inf> and WSe<inf>2</inf> for High-k Integration: A First-Principles Study. Langmuir, 34. pp. 2882-2889. ISSN 0743-7463

Lei, J and Wei, J and Tang, G and Zhang, Z and Qian, Q and Zheng, Z and Hua, M and Chen, KJ (2018) 650-V Double-Channel Lateral Schottky Barrier Diode with Dual-Recess Gated Anode. IEEE Electron Device Letters, 39. pp. 260-263. ISSN 0741-3106

Zhang, Z and Hua, M and He, J and Tang, G and Qian, Q and Chen, KJ (2018) Ab initio study of impact of nitridation at amorphous-SiN<inf>x</inf>/GaN interface. Applied Physics Express, 11. ISSN 1882-0778

Liu, S and Wang, M and Tao, M and Yin, R and Gao, J and Sun, H and Lin, W and Wen, CP and Wang, J and Wu, W and Hao, Y and Zhang, Z and Chen, KJ and Shen, B (2017) Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si<inf>3</inf>N<inf>4</inf> as Passivation and Post Gate-Recess Channel Protection Layers. IEEE Electron Device Letters, 38. pp. 1075-1078. ISSN 0741-3106

Tang, G and Wei, J and Zhang, Z and Tang, X and Hua, M and Wang, H and Chen, KJ (2017) Dynamic RON of GaN-on-Si lateral power devices with a floating substrate termination. IEEE Electron Device Letters, 38. pp. 937-940. ISSN 0741-3106

Hua, M and Wei, J and Tang, G and Zhang, Z and Qian, Q and Cai, X and Wang, N and Chen, KJ (2017) Normally-off LPCVD-SiNx/GaN MIS-FET with crystalline oxidation interlayer. IEEE Electron Device Letters, 38. pp. 929-932. ISSN 0741-3106

Qian, Q and Zhang, Z and Hua, M and Tang, G and Lei, J and Lan, F and Xu, Y and Yan, R and Chen, KJ (2017) Enhanced dielectric deposition on single-layer MoS<inf>2</inf> with low damage using remote N<inf>2</inf> plasma treatment. Nanotechnology, 28. 175202-. ISSN 0957-4484

Qian, Q and Zhang, Z and Hua, M and Wei, J and Lei, J and Chen, KJ (2017) Remote N<inf>2</inf> plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS<inf>2</inf> MOSFET. Applied Physics Express, 10. ISSN 1882-0778

Zhang, Z and Li, B and Qian, Q and Tang, X and Hua, M and Huang, B and Chen, KJ (2017) Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy. IEEE Transactions on Electron Devices, 64. pp. 4036-4043. ISSN 0018-9383

Tang, X and Li, B and Zhang, Z and Tang, G and Wei, J and Chen, KJ (2016) Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors with Photonic-Ohmic Drain. IEEE Transactions on Electron Devices, 63. pp. 2831-2837. ISSN 0018-9383

Qian, Q and Li, B and Hua, M and Zhang, Z and Lan, F and Xu, Y and Yan, R and Chen, KJ (2016) Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS<inf>2</inf> MOSFET with an AlN Interfacial Layer. Scientific Reports, 6. 27676-.

Wang, M and Hu, Y and Zhang, Z and Li, Y and Zhou, T and Ren, J (2016) First-principle study of the electronic structure and magnetism of lithium-adsorbed 3 d transition-metal phthalocyanines. Modern Physics Letters B, 30. ISSN 0217-9849

Huang, S and Liu, X and Wang, X and Kang, X and Zhang, J and Bao, Q and Wei, K and Zheng, Y and Zhao, C and Gao, H and Sun, Q and Zhang, Z and Chen, KJ (2016) High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure. IEEE Electron Device Letters, 37. pp. 1617-1620. ISSN 0741-3106

Cao, R and Zhang, Z and Wang, C and Li, H and Xie, X and Dong, H and Liu, H and Wang, W (2015) Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study. Journal of Applied Physics, 117. ISSN 0021-8979

Wei, J and Liu, S and Li, B and Tang, X and Lu, Y and Liu, C and Hua, M and Zhang, Z and Tang, G and Chen, KJ (2015) Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor. IEEE Electron Device Letters, 36. pp. 1287-1290. ISSN 0741-3106

Li, HB and Wang, W and Xie, X and Cheng, Y and Zhang, Z and Dong, H and Zheng, R and Wang, WH and Lu, F and Liu, H (2015) Electronic Structure and Ferromagnetism Modulation in Cu/Cu<inf>2</inf>O Interface: Impact of Interfacial Cu Vacancy and Its Diffusion. Scientific Reports, 5. 15191-.

Zhang, Z and Cao, R and Wang, C and Li, HB and Dong, H and Wang, WH and Lu, F and Cheng, Y and Xie, X and Liu, H and Cho, K and Wallace, R and Wang, W (2015) GaN as an interfacial passivation layer: Tuning band offset and removing fermi level pinning for III-V MOS devices. ACS Applied Materials and Interfaces, 7. pp. 5141-5149. ISSN 1944-8244

Zhang, Z and Geng, Z and Cai, D and Pan, T and Chen, Y and Dong, L and Zhou, T (2015) Structure, electronic and magnetic properties of hexagonal boron nitride sheets doped by 5d transition metal atoms: First-principles calculations and molecular orbital analysis. Physica E: Low-Dimensional Systems and Nanostructures, 65. pp. 24-29. ISSN 1386-9477

Zhang, ZF and Zhou, TG and Zhao, HY and Wei, XL (2014) First-principles calculations of 5d atoms doped hexagonal-AlN sheets: Geometry, magnetic property and the influence of symmetry and symmetry-breaking on the electronic structure. Chinese Physics B, 23. ISSN 1674-1056

Robertson, J and Guo, Y and Zhang, Z and Li, H Extending the metal-induced gap state model of Schottky barriers. Journal of Vacuum Science & Technology B, 38. 042208-042208. ISSN 2166-2746 (Unpublished)

Conference or Workshop Item

Lei, J and Wei, J and Tang, G and Zhang, Z and Qian, Q and Hua, M and Zheng, Z and Wang, Y and Chen, KJ (2019) Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode. In: UNSPECIFIED pp. 459-462..

Hua, M and Yang, S and Zheng, Z and Wei, J and Zhang, Z and Chen, KJ (2019) Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs. In: UNSPECIFIED pp. 467-470..

Zheng, Z and Hua, M and Wei, J and Zhang, Z and Chen, KJ (2019) Identifying the Location of Hole-Induced Gate Degradation in LPCVD-SiN<inf>x</inf>/GaN MIS-FETs under High Reverse-Bias Stress. In: UNSPECIFIED pp. 435-438..

Hua, M and Cai, X and Yang, S and Zhang, Z and Zheng, Z and Wei, J and Wang, N and Chen, KJ (2019) Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaO x N 1- x Channel. In: UNSPECIFIED 30.3.1-30.3.4..

Tang, G and Kwan, MH and Zhang, Z and He, J and Lei, J and Su, RY and Yao, FW and Lin, YM and Yu, JL and Yang, T and Chern, CH and Tsai, T and Tuan, HC and Kalnitsky, A and Chen, KJ (2018) High-speed, high-reliability GaN power device with integrated gate driver. In: UNSPECIFIED pp. 76-79..

Hua, M and Wei, J and Bao, Q and He, J and Zhang, Z and Zheng, Z and Lei, J and Chen, KJ (2018) Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiN<inf>x</inf>/GaN MIS-FETs. In: UNSPECIFIED 33.2.1-33.2.4..

Lei, J and Wei, J and Tang, G and Qian, Q and Hua, M and Zhang, Z and Zheng, Z and Chen, KJ (2018) An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss. In: UNSPECIFIED 25.2.1-25.2.4..

Hua, M and Zhang, Z and Wei, J and Lei, J and Tang, G and Fu, K and Cai, Y and Zhang, B and Chen, KJ (2017) Integration of LPCVD-SiN<inf>x</inf> gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime. In: UNSPECIFIED 10.4.1-10.4.4..

Zhang, Z and Li, B and Tang, X and Qian, Q and Hua, M and Huang, B and Chen, KJ (2017) Nitridation of GaN surface for power device application: A first-principles study. In: UNSPECIFIED 36.2.1-36.2.4..

Hua, M and Zhang, Z and Qian, Q and Wei, J and Bao, Q and Tang, G and Chen, KJ (2017) High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer. In: UNSPECIFIED pp. 89-92..

Tang, G and Wei, J and Zhang, Z and Tang, X and Hua, M and Wang, H and Chen, KJ (2017) Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices. In: UNSPECIFIED pp. 235-238..

Tang, X and Li, B and Wang, H and Wei, J and Tang, G and Zhang, Z and Chen, KJ (2016) Impact of integrated photonic-ohmic drain on static and dynamic characteristics of GaN-on-Si heterojunction power transistors. In: UNSPECIFIED pp. 31-34..

Wei, J and Liu, S and Li, B and Tang, X and Lu, Y and Liu, C and Hua, M and Zhang, Z and Tang, G and Chen, KJ (2015) Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess. In: UNSPECIFIED 9.4.1-9.4.4..

This list was generated on Tue Jan 18 05:20:13 2022 GMT.